PHD38N02LT,118 Nexperia MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PHD38N02LT,118
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Series name
- TrenchMOS(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-252-3|DPak|SC-63
- Drain to Source voltage
- 20V
- Continuous drain current
- 44.7A
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Drain to Source on-state resistance
- 16mOhm
- Vgs(th)
- 1.5 V
- Gate Charge (Qg)
- 15.1nC
- Vgs (Max)
- 12V
- Input Capacitance (Ciss)
- 800pF
- Power consumption
- 57.6W
- Operating temperature range
- -55 to 175C
- Other names
- PHD38N02LT /T3-ND | PHD38N02LT /T3 | 934057587118
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 10000
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