C2M1000170D Wolfspeed MOSFET - 商品詳細情報
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C2M1000170D
C2M1000170D
HTSN : 8541290095
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| Datasheet | EN_Cree_Datasheet_20150428195743873 |
| Datasheet | EN_Cree_Datasheet_20180216060504524 |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Cree_Datasheet_20150428195743873 |
| Datasheet | EN_Cree_Datasheet_20180216060504524 |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Wolfspeed
- Product name
- C2M1000170D
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Series name
- Z-FET(TM)
- Field-effect transistor type
- N-CH
- Technology System
- SiCFET(Silicon Carbide)
- Package
- TO-247-3
- Drain to Source voltage
- 1700V
- Continuous drain current
- 4.9A
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Drain to Source on-state resistance
- 1.1Ohm
- Vgs(th)
- 2.4 V
- Gate Charge (Qg)
- 13nC
- Vgs (Max)
- +25|-10V
- Input Capacitance (Ciss)
- 191pF
- Power consumption
- 69W
- Operating temperature range
- -55 to 150C
- Type
- Power MOSFET
- Related Products
-
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