TK12V60W,LVQ(S Toshiba MOSFET - 商品詳細情報
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TK12V60W,LVQ(S
TK12V60W,LVQ(S
HTSN : 8541290080
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| Data Sheet | |
|---|---|
| Datasheet | EN_Toshiba_データシート_20141224234935104 |
Specifications
- Manufacturer name
- Toshiba
- Product name
- TK12V60W,LVQ(S
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Package
- DFN 8 x 8
- Drain to Source voltage
- 600V
- Continuous drain current
- 11.5A
- Drain to Source on-state resistance
- 0.3Ω(max)@V_GS=10V
- Other names
- TK12V60W
- Remarks
- 世代:DTMOSIV / ゲート入力電荷量:25nC(typ.) / 入力容量:890pF(typ.)
- Product name
- 小信号MOS FET 1素子
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 2500
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Details
- Expected Shipping Date : Not Available
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C1S Part Number
:C1S751201141855
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Product name : TK12V60W,LVQ(S
Manufacturers : Toshiba
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Product name : TK12V60W,LVQ(S
Manufacturers : Toshiba
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