BAS4007WH6327XTSA1 Infineon Technologies Schottky Barrier Diode - 商品詳細情報
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BAS4007WH6327XTSA1
BAS4007WH6327XTSA1
Diode Array 2 Independent 40 V 120mA (DC) Surface Mount SC-82A, SOT-343
HTSN : 8541100070
Search Alternative Products
Diode Array 2 Independent 40 V 120mA (DC) Surface Mount SC-82A, SOT-343
HTSN : 8541100070
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20210820161518001 |
| Environmental and Reliability Data | |
| Constitution Materials List | MCDS_2017-09-25_22-50-59_MA000844194_PG-SOT343-4-3 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BAS4007WH6327XTSA1
- Product classification
- Schottky Barrier Diode
- Lifecycle Status
- Active
- RoHS
- RoHS
- Package
- SC-70|SOT-323
- Other names
- BAS4007WH6327XTSA1TR-ND | SP000749806 | BAS4007WH6327XTSA1TR | 2156-BAS4007WH6327XTSA1 | 448-BAS4007WH6327XTSA1TR | IFEINFBAS4007WH6327XTSA1 | BAS 40-07W H6327 | 448-BAS4007WH6327XTSA1DKR | BAS 40-07W H6327-ND | 448-BAS4007WH6327XTSA1CT
- Current - Average Rectified Io per Diode
- 120mA(DC)
- Current - Reverse Leakage with Vr Applied
- 1uA@30V
- Diode Configuration
- 2Independence
- Diode type
- Schottky
- Mounting Type
- Surface Mount
- Operating temperature range
- 150 C (Max)
- Package (Supplier)
- PG-SOT323-3
- Reverse recovery time
- 100ps
- Spannung – DC Reverse Vr Max
- 40V
- Spannung – Vorwärts (Vf) Max
- 1V@40mA
- Speed
- Small Signal =< 200mA(Io)|Any Speed
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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