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PBRP113ZT,215  Nexperia  Bipolar Transistor (BJT)  -  商品詳細情報

PBRP113ZT,215 Nexperia

The images are for reference only. For the precise specifications, refer to the product specifications.

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PBRP113ZT,215

PBRP113ZT,215

Nexperia

Bipolar Transistor (BJT)

Nexperia

Bipolar Transistor (BJT)

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Product Overview

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW Surface Mount TO-236AB

Lifecycle Status : Active
ECCN EAR99

HTSN 8541210095

Product Overview

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW Surface Mount TO-236AB

Lifecycle Status : Active
ECCN EAR99

HTSN 8541210095

Product Information

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Specifications

Manufacturer name
Nexperia
Product name
PBRP113ZT,215
Product classification
Bipolar Transistor (BJT)
Lifecycle Status
Active
RoHS
RoHS
晶体管类型
PNP-Prebias
收集器电流
600mA
直流电流増宽度率
190@50mA@5V|230@300mA@5V|190@600mA@5V
封装
TO-236-3|SC-59|SOT-23-3
收集器发射器电压
40V
其它名称
568-7258-6-ND | 568-7258-2-ND | 568-7258-1-ND | 568-7258-1 | 568-7258-2 | 2156-PBRP113ZT,215-1727 | 568-7258-6 | PBRP113ZT,215-ND | PBRP113ZT T/R | PBRP113ZT215 | PBRP113ZT T/R-ND | 1727-5713-2 | 1727-5713-1 | 934058988215 | 1727-5713-6 | 5202-PBRP113ZT,215TR
Mounting Type
Surface Mount
Vce 饱和度(最大值)
750mV@6mA,600mA
包装(供应商)
TO-236 AB
最大功率
250mW
电压-集电极-发射极击穿(最大值)
40V
电阻发射器基极 (R2)
10kOhms
直流电流增益 (hFE)(最小值)
230@300mA,5V
类型
PNP
阻力基础 (R1)
1kOhms
集流器 (Ic)(最大值)
600mA
集流器截止(最大值)
500nA
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Expected Shipping Date : Not Available
  • C1S Part Number

    :

    C1S537100387880

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