TJ30S06M3L(T6L1,NQ Toshiba MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Toshiba
- Product name
- TJ30S06M3L(T6L1,NQ
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- U-MOSVI
- Field-effect transistor type
- P-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-252-3|DPak|SC-63
- Drain to Source voltage
- 60V
- Continuous drain current
- 30A
- Drive Voltage (Max Rds On, Min Rds On)
- 6|10V
- Drain to Source on-state resistance
- 21.8mOhm
- Vgs(th)
- 3 V
- Gate Charge (Qg)
- 80nC
- Vgs (Max)
- +10|-20V
- Input Capacitance (Ciss)
- 3950pF
- Power consumption
- 68W
- Operating temperature range
- 175C
- Other names
- TJ30S06M3L, 2SJ401(Q)
- Remarks
- 世代：U-MOSVI / ゲート入力電荷量：80nC(typ.) / 入力容量：3950pF(typ.)
- Product name
- 小信号MOS FET 1素子
- Type
- Power MOSFET
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 2000
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