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BAS12507WH6327XTSA1  Infineon Technologies  Schottky Barrier Diode  -  商品詳細情報

BAS12507WH6327XTSA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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BAS12507WH6327XTSA1

BAS12507WH6327XTSA1

Infineon Technologies

Schottky Barrier Diode

Infineon Technologies

Schottky Barrier Diode

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Product Overview

Diode Array 2 Independent 25 V 100mA (DC) Surface Mount SC-82A, SOT-343

Lifecycle Status : Obsolete
ECCN EAR99

HTSN 8541100070

Product Overview

Diode Array 2 Independent 25 V 100mA (DC) Surface Mount SC-82A, SOT-343

Lifecycle Status : Obsolete
ECCN EAR99

HTSN 8541100070

Product Information

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Data sheet
Design/Simulation Data
Other Documents

Specifications

Manufacturer name
Infineon Technologies
Product name
BAS12507WH6327XTSA1
Product classification
Schottky Barrier Diode
Lifecycle Status
Obsolete
RoHS
RoHS
Package
SC-82A|SOT-343
Other names
BAS12507WH6327XTSA1TR-ND | 448-BAS12507WH6327XTSA1CT | BAS 125-07W H6327-ND | 2156-BAS12507WH6327XTSA1 | IFEINFBAS12507WH6327XTSA1 | BAS12507WH6327XTSA1TR | 448-BAS12507WH6327XTSA1TR | SP000749602 | BAS 125-07W H6327 | 448-BAS12507WH6327XTSA1DKR
Current - Average Rectified Io per Diode
100mA(DC)
Current - Reverse Leakage with Vr Applied
150nA@25V
Diode Configuration
2Independence
Diode type
Schottky
Mounting Type
Surface Mount
Operating temperature range
150 C (Max)
Package (Supplier)
PG-SOT343-4
Spannung – DC Reverse Vr Max
25V
Spannung – Vorwärts (Vf) Max
950mV@35mA
Speed
Small Signal =< 200mA(Io)|Any Speed
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
3000
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