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SCT3030KLGC11  Rohm  MOSFET  -  商品詳細情報

SCT3030KLGC11

Rohm

MOSFET

SCT3030KLGC11 Rohm

The images are for reference only. For the precise specifications, refer to the product specifications.

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  • SCT3030KLGC11

    SCT3030KLGC11

    Rohm

    MOSFET

    Rohm

    MOSFET

    Added to bookmarks.
  • Product Overview

    1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541290095

    Product Overview

    1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541290095

    Product Information

    Related Videos
    Design/Simulation Data
    Other Documents
    Data Sheet
    Datasheet EN_Rohm_データシート_20161101101043856
    Datasheet EN_Rohm_Datasheet_20180216132351255
    Datasheet EN_Rohm_Datasheet_20210617195809059
    Environmental and Reliability Data
    Other Environmental and Reliability Data Moisture Sensitivity Level

    Specifications

    Manufacturer name
    Rohm
    Product name
    SCT3030KLGC11
    Product classification
    MOSFET
    Lifecycle Status
    Active
    RoHS
    RoHS
    Field-effect transistor type
    N-CH
    Technology System
    SiCFET(Silicon Carbide)
    Package
    TO-247N
    Drain to Source voltage
    1200V
    Continuous drain current
    72A
    Drive Voltage (Max Rds On, Min Rds On)
    18V
    Drain to Source on-state resistance
    39mOhm
    Vgs(th)
    5.6 V
    Gate Charge (Qg)
    131nC
    Vgs (Max)
    +22|-4V
    Input Capacitance (Ciss)
    2222pF
    Power consumption
    339W
    Operating temperature range
    175C
    Manufacturer Packaging
    Tube
    Manufacturer packaging quantity
    450

    If you find an error in the product information, please let us know here.

    Documents