SCT3030KLGC11 Rohm MOSFET - 商品詳細情報
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SCT3030KLGC11
SCT3030KLGC11
1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
HTSN : 8541290095
Search Alternative Products
1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
HTSN : 8541290095
| Datasheet | EN_Rohm_データシート_20161101101043856 |
| Datasheet | EN_Rohm_Datasheet_20180216132351255 |
| Datasheet | EN_Rohm_Datasheet_20210617195809059 |
| Data Sheet | |
|---|---|
| Datasheet | EN_Rohm_データシート_20161101101043856 |
| Datasheet | EN_Rohm_Datasheet_20180216132351255 |
| Datasheet | EN_Rohm_Datasheet_20210617195809059 |
| Environmental and Reliability Data | |
| Other Environmental and Reliability Data | Moisture Sensitivity Level |
Specifications
- Manufacturer name
- Rohm
- Product name
- SCT3030KLGC11
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Technology System
- SiCFET(Silicon Carbide)
- Package
- TO-247N
- Drain to Source voltage
- 1200V
- Continuous drain current
- 72A
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Drain to Source on-state resistance
- 39mOhm
- Vgs(th)
- 5.6 V
- Gate Charge (Qg)
- 131nC
- Vgs (Max)
- +22|-4V
- Input Capacitance (Ciss)
- 2222pF
- Power consumption
- 339W
- Operating temperature range
- 175C
- Manufacturer Packaging
- Tube
- Manufacturer packaging quantity
- 450
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