SCTW100N65G2AG STMicroelectronics MOSFET - 商品詳細情報
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SCTW100N65G2AG
SCTW100N65G2AG
N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
HTSN : 8541290095
Search Alternative Products
N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
HTSN : 8541290095
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- STMicroelectronics
- Product name
- SCTW100N65G2AG
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- Automotive/AEC-Q101
- Field-effect transistor type
- N-CH
- Technology System
- SiCFET(Silicon Carbide)
- Drain to Source voltage
- 650V
- Continuous drain current
- 100A
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Drain to Source on-state resistance
- 26mOhm
- Vgs(th)
- 5 V
- Gate Charge (Qg)
- 162nC
- Vgs (Max)
- +22|-10V
- Input Capacitance (Ciss)
- 3315pF
- Power consumption
- 420W
- Operating temperature range
- -55 to 200C
- Other names
- 497-SCTW100N65G2AG
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