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SCTW100N65G2AG  STMicroelectronics  MOSFET  -  商品詳細情報

SCTW100N65G2AG

STMicroelectronics

MOSFET

SCTW100N65G2AG STMicroelectronics

The images are for reference only. For the precise specifications, refer to the product specifications.

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  • SCTW100N65G2AG

    SCTW100N65G2AG

    STMicroelectronics

    MOSFET

    STMicroelectronics

    MOSFET

    Added to bookmarks.
  • Product Overview

    N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541290095

    Product Overview

    N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541290095

    Product Information

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    Data sheet
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    Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian

    Specifications

    Manufacturer name
    STMicroelectronics
    Product name
    SCTW100N65G2AG
    Product classification
    MOSFET
    Lifecycle Status
    Active
    RoHS
    RoHS
    Series name
    Automotive/AEC-Q101
    Field-effect transistor type
    N-CH
    Technology System
    SiCFET(Silicon Carbide)
    Drain to Source voltage
    650V
    Continuous drain current
    100A
    Drive Voltage (Max Rds On, Min Rds On)
    18V
    Drain to Source on-state resistance
    26mOhm
    Vgs(th)
    5 V
    Gate Charge (Qg)
    162nC
    Vgs (Max)
    +22|-10V
    Input Capacitance (Ciss)
    3315pF
    Power consumption
    420W
    Operating temperature range
    -55 to 200C
    Other names
    497-SCTW100N65G2AG

    If you find an error in the product information, please let us know here.

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