IGLD60R190D1AUMA1 Infineon Technologies MOSFET - 商品詳細情報
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IGLD60R190D1AUMA1
IGLD60R190D1AUMA1
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Lifecycle Status : Obsolete
ECCN
: EAR99
HTSN : 8541290095
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Data sheet
Design/Simulation Data
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Other Documents
| Design and Simulation Data | |
|---|---|
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IGLD60R190D1AUMA1
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- Series name
- CoolGaN(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Drain to Source voltage
- 600V
- Continuous drain current
- 10A
- Vgs(th)
- 1.6 V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss)
- 157pF
- Power consumption
- 62.5W
- Operating temperature range
- -55 to 150C
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