PMPB10XNE,115 Nexperia MOSFET - 商品詳細情報
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PMPB10XNE,115
PMPB10XNE,115
HTSN : 854129
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| Data Sheet | |
|---|---|
| Datasheet | EN_Nexperia_Datasheet_20251031115325707 |
Specifications
- Manufacturer name
- Nexperia
- Product name
- PMPB10XNE,115
- Product classification
- MOSFET
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- 6-UDFN
- Drain to Source voltage
- 20V
- Continuous drain current
- 9A
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8|4.5V
- Drain to Source on-state resistance
- 14mOhm
- Vgs(th)
- 0.7V
- Gate Charge (Qg)
- 34nC
- Vgs (Max)
- 12V
- Input Capacitance (Ciss)
- 2175pF
- Power consumption
- 1.7|12.5W
- Operating temperature range
- -55 to 150C
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