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TK10P60W,RVQ(S  Toshiba  MOSFET  -  商品詳細情報

TK10P60W,RVQ(S

Toshiba

MOSFET

TK10P60W,RVQ(S Toshiba

The images are for reference only. For the precise specifications, refer to the product specifications.

Added to bookmarks.

TK10P60W,RVQ(S

TK10P60W,RVQ(S

Toshiba

MOSFET

Toshiba

MOSFET

Added to bookmarks.
产品概要

Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK

生命周期状态 : Active
ECCN EAR99

HTSN 8541290080

产品概要

Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK

生命周期状态 : Active
ECCN EAR99

HTSN 8541290080

产品文档

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规格

制造商名称
Toshiba
制品名
TK10P60W,RVQ(S
制品分类
MOSFET
生命周期状态
Active
RoHS
符合RoHS标准
Field-effect transistor type
N-CH
Package
DPAK
Drain to Source voltage
600V
Continuous drain current
9.7A
Drain to Source on-state resistance
430mOhm
Other names
TK10P60W
Remarks
世代:DTMOSIV / ゲート入力電荷量:20nC(typ.) / 入力容量:700pF(typ.)
Product name
小信号MOS FET 1素子
原厂包装
Tape & Reel
制造商数量
2000

如果产品信息中有错误,请在此处指出。