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	Product Information	Sales Information	Lifecycle Status	ECCN	HTSN	Country of Origin	Series name	Field-effect transistor type	Technology System	Package	Drain to Source voltage	Continuous drain current	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source on-state resistance	Vgs(th)	Gate Charge (Qg)	Vgs (Max)	Input Capacitance (Ciss)	Power consumption	Operating temperature range	Manufacturer's recommendation	Product Longevity Program
	IGLD60R070D1AUMA1 Infineon Technologies MOSFET TRANSJFETNCH600V15AGAN8PINLSONEP Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )	ECCN：EAR99																			SP001705420 \| IGLD60R070D1AUMA1DKR \| IGLD60R070D1AUMA1TR \| 2156-IGLD60R070D1AUMA1TR \| IGLD60R070D1AUMA1CT
	GS-065-060-5-B-A-MR Infineon Technologies MOSFET 650VAUTOMOTIVEEMODEGANTRANSISTOR Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )	ECCN：EAR99								60		650		14							11.0 x 9.0 x 0.63	25	Automotive 650V, 60A, GaN E-mode, GaNPX® package, Bottom-side cooled
	GS-065-008-1-L-TR Infineon Technologies MOSFET MOSFET650V Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								8		650		1.5							5.0 x 6.0 x 0.85	225	650V, 8A, GaN E-mode, 5x6 PDFN, Bottom-side cooled	SaleProducts202508en	Transistors / Special Price
	GS66504B-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								15		650		3.3							5.0 x 6.6 x 0.51	100	650V, 15A, GaN E-mode, GaNPX® package, Bottom-side cooled
	IGLD60R190D1AUMA1 Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )	ECCN：EAR99			CoolGaN(TM)	N-CH	MOSFET(Metal Oxide)		600V	10A			1.6 V		-10V	157pF	62.5W	-55 to 150C
	IGT60R190D1SATMA1 Infineon Technologies MOSFET GALLIUMNITRIDECOOLGAN™600VEMODEPOWERTRANSISTOR Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )	ECCN：EAR99			CoolGaN(TM)	N-CH	GaNFET(Gallium Nitride)		600V	12.5A			1.6 V		-10V	157pF	55.5W	-55 to 150C			IGT60R190D1SATMA1DKR \| 2156-IGT60R190D1SATMA1-448 \| SP001701702 \| IGT60R190D1SATMA1CT \| IGT60R190D1SATMA1TR
	IGC033S101XTMA1 Infineon Technologies MOSFET TRANSMOSFETNCHGAN100V21A6PINVSON Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99
	IGLD60R190D1AUMA1 Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99			CoolGaN(TM)	N-CH	MOSFET(Metal Oxide)		600V	10A			1.6 V		-10V	157pF	62.5W	-55 to 150C
	GS66516B-MR Infineon Technologies MOSFET EMODEGANTRANSISTOR Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								60		650		14.2							11.0 x 9.0 x 0.54	25	650V, 60A, GaN E-mode, GaNPX® package, Bottom-side cooled
	GS61008T-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								90		100		8							7.0 x 4.0 x 0.54	7	100V, 90A, GaN E-mode, GaNPX® package, Top-side cooled	CP_transistor
	GS66508T-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								30		650		6.1							7.0 x 4.5 x 0.54	50	650V, 30A, GaN E-mode, GaNPX® package, Top-side cooled
	GS66508B-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								30		650		6.1							7.0 x 8.4 x 0.51	50	650V, 30A, GaN E-mode, GaNPX® package, Bottom-side cooled
	GS61004B-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								38		100		3.3							4.6 x 4.4 x 0.51	16	100V, 38A, GaN E-mode, GaNPX® package, Bottom-side cooled
	GS66506T-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )	ECCN：EAR99								22.5		650		4.5							5.6 x 4.5 x 0.54	67	650V, 22.5A, GaN E-mode, GaNPX® package, Top-side cooled
	GS-065-060-5-T-A-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								60		650		14							9.0 x 7.6 x 0.69	25	Automotive 650V, 60A, GaN E-mode, GaNPX® package, Top-side cooled
	GS-065-004-1-L-TR Infineon Technologies MOSFET MOSFET650V Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								4		650		0.8							5.0 x 6.0 x 0.85	450	650V, 4A, GaN E-mode, 5x6 PDFN, Bottom-side cooled	SaleProducts202508en	CP_transistor
	IGO60R070D1AUMA1 Infineon Technologies MOSFET GALLIUMNITRIDECOOLGAN™600VEMODEPOWERTRANSISTOR Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )	ECCN：EAR99			CoolGaN(TM)	N-CH	GaNFET(Gallium Nitride)		600V	31A			1.6 V		-10V	380pF	125W	-55 to 150C
	GS-065-030-2-L-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								30		650		6.7							8.0 x 8.0 x 0.9	50	650V, 30A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
	GS-065-030-2-L-TR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.											30		650		6.7							8.0 x 8.0 x 0.9	50	650V, 30A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
	IGO60R070D1AUMA2 Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )	ECCN：EAR99			CoolGaN(TM)													-55 to 150C(TJ)			20-PowerSOIC(11.0mm Width)	448-IGO60R070D1AUMA2TR \| SP005557222 \| 448-IGO60R070D1AUMA2DKR \| 448-IGO60R070D1AUMA2CT	Surface Mount	85 to 305V	PG-DSO-20-85
	GS66516B-TR Infineon Technologies MOSFET EMODEGANTRANSISTOR Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )
	IGLR60R190D1E8238XUMA1 Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.						CoolGaN(TM)
	IGOT60R070D1E8237AUMA1 Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.		( PCN/PDN Information )				CoolGaN(TM)
	GS61008P-MR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.			ECCN：EAR99								90		100		8							7.6 x 4.6 x 0.51	7	100V, 90A, GaN E-mode, GaNPX® package, Bottom-side cooled
	GS66508T-TR Infineon Technologies MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.											30		650		6.1							7.0 x 4.5 x 0.54	50	650V, 30A, GaN E-mode, GaNPX® package, Top-side cooled

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