BAS4004E6433HTMA1 Infineon Technologies 肖特基势垒二极管 - 商品詳細情報
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Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BAS4004E6433HTMA1
- Product classification
- 肖特基势垒二极管
- Lifecycle Status
- Active
- RoHS
- RoHS
- Package
- TO-236-3|SC-59|SOT-23-3
- Other names
- 448-BAS4004E6433HTMA1DKR | BAS 40-04 E6433 | BAS4004E6433XT | 2156-BAS4004E6433HTMA1 | BAS4004E6433HTMA1TR-ND | SP000010243 | 448-BAS4004E6433HTMA1TR | BAS 40-04 E6433-ND | INFINFBAS4004E6433HTMA1 | 448-BAS4004E6433HTMA1CT | BAS4004E6433HTMA1TR
- Current - Average Rectified Io per Diode
- 120mA(DC)
- Current - Reverse Leakage with Vr Applied
- 1uA@30V
- Diode Configuration
- 1Series Connection
- Diode type
- Schottky
- Mounting Type
- Surface Mount
- Operating temperature range
- 150 C (Max)
- Package (Supplier)
- SOT-23-3
- Reverse recovery time
- 100ps
- Spannung – DC Reverse Vr Max
- 40V
- Spannung – Vorwärts (Vf) Max
- 1V@40mA
- Speed
- Small Signal =< 200mA(Io)|Any Speed
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 10000
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