GS66516B-MR Infineon Technologies MOSFET - 商品詳細情報
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GS66516B-MR
GS66516B-MR
E-mode GaN transistor
HTSN : 8541290095
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| Data Sheet | |
|---|---|
| Datasheet | EN_GaN Systems_Datasheet_20230315140829523 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- GS66516B-MR
- Product classification
- MOSFET
- Lifecycle Status
- 量产中
- RoHS
- RoHS
- 连续漏极电流
- 60
- 源漏开态电阻
- 650
- Gate Charge (Qg)
- 14.2
- 产品说明
- 650V, 60A, GaN E-mode, GaNPX® package, Bottom-side cooled
- 尺寸
- 11.0 x 9.0 x 0.54
- 规格
- 25
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C1S Part Number
:C1S339000001035
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