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IPD90N10S406ATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

IPD90N10S406ATMA1

Infineon Technologies

MOSFET

IPD90N10S406ATMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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IPD90N10S406ATMA1

IPD90N10S406ATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

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Product Overview

N-Channel 100 V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Overview

N-Channel 100 V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Information

Related Videos
Data sheet
Design/Simulation Data
Other Documents

Specifications

Manufacturer name
Infineon Technologies
Product name
IPD90N10S406ATMA1
Product classification
MOSFET
Lifecycle Status
Active
RoHS
RoHS
Series name
Automotive/AEC-Q101/OptiMOS(TM)
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Drain to Source voltage
100V
Continuous drain current
90A
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source on-state resistance
6.7mOhm
Vgs(th)
3.5 V
Gate Charge (Qg)
68nC
Vgs (Max)
20V
Input Capacitance (Ciss)
4870pF
Power consumption
136W
Operating temperature range
-55 to 175C
Other names
IPD90N10S406ATMA1-ND | 448-IPD90N10S406ATMA1TR | 448-IPD90N10S406ATMA1CT | 448-IPD90N10S406ATMA1DKR | SP001101896
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
2500

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