IRF530NPBF Infineon Technologies MOSFET - 商品詳細情報
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IRF530NPBF
IRF530NPBF
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Product Overview
N-Channel 100 V 17A (Tc) 70W (Tc) Through Hole TO-220AB
Lifecycle Status : Active
ECCN
: EAR99
HTSN : 8541290095
Search Alternative Products
Product Overview
N-Channel 100 V 17A (Tc) 70W (Tc) Through Hole TO-220AB
Lifecycle Status : Active
ECCN
: EAR99
HTSN : 8541290095
Data sheet
Design/Simulation Data
Other Documents
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223013842955 |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013175621601 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IRF530NPBF
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 100V
- Continuous drain current
- 17A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 90mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 37nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 920pF
- Power consumption
- 70W
- Operating temperature range
- -55 to 175C
- Other names
- SP001570120 | *IRF530NPBF
- Type
- Power MOSFET
- Manufacturer Packaging
- Tube
- Manufacturer packaging quantity
- 1000
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