PSMN009-100B,118 Nexperia MOSFET - 商品詳細情報
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PSMN009-100B,118
PSMN009-100B,118
HTSN : 8541290095
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| Data Sheet | |
|---|---|
| Datasheet | EN_Nexperia B.V._Datasheet_20150226080233218 |
Specifications
- Manufacturer name
- Nexperia
- Product name
- PSMN009-100B,118
- Product classification
- MOSFET
- Lifecycle Status
- 停产品
- RoHS
- RoHS
- 系列名
- TrenchMOS(TM)
- FET类型
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- 封装
- TO-263-3|D2Pak|TO-263AB
- 漏源电压
- 100V
- 连续漏极电流
- 75A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- 源漏开态电阻
- 8.8mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 156nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 8250pF
- 消耗电力
- 230W
- 动作温度范围
- -55 to 175C
- 类型
- Power MOSFET
- Related Products
-
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