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IGT60R190D1SATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

IGT60R190D1SATMA1

Infineon Technologies

MOSFET

IGT60R190D1SATMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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IGT60R190D1SATMA1

IGT60R190D1SATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

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Product Overview

Gallium nitride CoolGaN™ 600V e-mode power transistor

Lifecycle Status : Obsolete
ECCN EAR99

HTSN 8541290095

Product Overview

Gallium nitride CoolGaN™ 600V e-mode power transistor

Lifecycle Status : Obsolete
ECCN EAR99

HTSN 8541290095

Product Information

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Specifications

Manufacturer name
Infineon Technologies
Product name
IGT60R190D1SATMA1
Product classification
MOSFET
Lifecycle Status
Obsolete
Series name
CoolGaN(TM)
Field-effect transistor type
N-CH
Technology System
GaNFET(Gallium Nitride)
Drain to Source voltage
600V
Continuous drain current
12.5A
Vgs(th)
1.6 V
Vgs (Max)
-10V
Input Capacitance (Ciss)
157pF
Power consumption
55.5W
Operating temperature range
-55 to 150C
Other names
IGT60R190D1SATMA1DKR | 2156-IGT60R190D1SATMA1-448 | SP001701702 | IGT60R190D1SATMA1CT | IGT60R190D1SATMA1TR
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
2000

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