HP8M31TB1 Rohm MOSFET - 商品詳細情報
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HP8M31TB1
HP8M31TB1
60V Nch+Pch Power MOSFET
HTSN : 8541290095
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| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Rohm_Datasheet_20210617200100377 |
| Environmental and Reliability Data | |
| Other Environmental and Reliability Data | Moisture Sensitivity Level |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Rohm
- Product name
- HP8M31TB1
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- N and P-Channel
- Package
- 8-Power TDFN
- Drain to Source voltage
- 60V
- Mounting Type
- Surface Mount
- Other names
- HP8M31TB1DKR | HP8M31TB1TR | HP8M31TB1CT
- Current - Drain (Id) (25°C)
- 8.5A
- FET Feature
- Standard
- Gate Charge - (when applying Vgs)
- 12.3nC|38nC@10V
- Input Capacitance - (Ciss when Vds is applied)
- 470pF|2300pF@30V
- On Resistance - (Rds when Id,Vgs is applied)
- 65mOhm@8.5|10|70mOhm@8.5A|10V
- On Voltage - (Vgs when Id is applied)
- 3V@1mA
- Operating temperature
- 150C
- Package (Supplier)
- 8-HSOP
- Power-Maximum
- 3W
- Manufacturer packaging quantity
- 500
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