2SK3566(STA4,Q,M) Toshiba MOSFET - 商品詳細情報
加工依頼
2SK3566(STA4,Q,M)
2SK3566(STA4,Q,M)
Trans MOSFET N-CH Si 900V 2.5A 3-Pin(3+Tab) TO-220NIS
HTSN : 8541290080
加工依頼
Trans MOSFET N-CH Si 900V 2.5A 3-Pin(3+Tab) TO-220NIS
HTSN : 8541290080
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Design and Simulation Data | |
|---|---|
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
规格
- 制造商名称
- Toshiba
- 制品名
- 2SK3566(STA4,Q,M)
- 制品分类
- MOSFET
- 生命周期状态
- NRND
- RoHS
- RoHS
- Series name
- π-MOSIV
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 900V
- Continuous drain current
- 2.5A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 6.4Ohm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 12nC
- Vgs (Max)
- 30V
- Input Capacitance (Ciss)
- 470pF
- Power consumption
- 40W
- Operating temperature range
- 150C
- Other names
- 2SK3566
- Remarks
- 世代:π-MOSIV / ゲート入力電荷量:12nC(typ.) / 入力容量:470pF(typ.)
- Product name
- 小信号MOS FET 1素子
- Type
- Power MOSFET
- 制造商数量
- 50
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