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2SK3566(STA4,Q,M)  Toshiba  MOSFET  -  商品詳細情報

2SK3566(STA4,Q,M)

Toshiba

MOSFET

2SK3566(STA4,Q,M) Toshiba

The images are for reference only. For the precise specifications, refer to the product specifications.

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2SK3566(STA4,Q,M)

2SK3566(STA4,Q,M)

Toshiba

MOSFET

Toshiba

MOSFET

Added to bookmarks.
产品概要

Trans MOSFET N-CH Si 900V 2.5A 3-Pin(3+Tab) TO-220NIS

生命周期状态 : NRND
ECCN EAR99

HTSN 8541290080

产品概要

Trans MOSFET N-CH Si 900V 2.5A 3-Pin(3+Tab) TO-220NIS

生命周期状态 : NRND
ECCN EAR99

HTSN 8541290080

产品文档

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数据表
设计、模拟用数据
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其他资料
Design and Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian

规格

制造商名称
Toshiba
制品名
2SK3566(STA4,Q,M)
制品分类
MOSFET
生命周期状态
NRND
RoHS
RoHS
Series name
π-MOSIV
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Package
TO-220-3
Drain to Source voltage
900V
Continuous drain current
2.5A
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source on-state resistance
6.4Ohm
Vgs(th)
4 V
Gate Charge (Qg)
12nC
Vgs (Max)
30V
Input Capacitance (Ciss)
470pF
Power consumption
40W
Operating temperature range
150C
Other names
2SK3566
Remarks
世代:π-MOSIV / ゲート入力電荷量:12nC(typ.) / 入力容量:470pF(typ.)
Product name
小信号MOS FET 1素子
Type
Power MOSFET
制造商数量
50

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