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DTA114YKAT146  Rohm  Pre-Biased Bipolar Transistor  -  商品詳細情報

DTA114YKAT146 Rohm

The images are for reference only. For the precise specifications, refer to the product specifications.

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DTA114YKAT146

DTA114YKAT146

Rohm

Pre-Biased Bipolar Transistor

Rohm

Pre-Biased Bipolar Transistor

Added to bookmarks.
Lifecycle Status : Active
ECCN EAR99

HTSN 8541210075

Lifecycle Status : Active
ECCN EAR99

HTSN 8541210075

Product Information

Related Videos
Design/Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian
Other Documents
Data Sheet
Datasheet EN_Rohm_データシート_20161101101043494
Datasheet EN_Rohm_Datasheet_20180216132357567
Datasheet EN_Rohm_Datasheet_20180221201708135
Datasheet EN_Rohm_Datasheet_20180323000309187
Datasheet EN_Rohm_Datasheet_20210617194532102
Environmental and Reliability Data
Other Environmental and Reliability Data Moisture Sensitivity Level
Design and Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian

Specifications

Manufacturer name
Rohm
Product name
DTA114YKAT146
Product classification
Pre-Biased Bipolar Transistor
Lifecycle Status
Active
RoHS
RoHS
Transistor type
PNP-Prebias
Collector-emitter voltage
50V
Collector current
100mA
R1/R2
0.213
Package
TO-236-3|SC-59|SOT-23-3
Other names
DTA114YKAT146CT | DTA114YKAT146TR | DTA114YKAT146DKR
Current-Collector (Ic) (maximum)
100mA
Current-Collector cutoff (maximum)
500nA
DC current gain (hFE) (minimum)
68@5mA,5V
DC electricity gain
68@5mA|5V
Frequency-Transition
250MHz
Mounting Type
Surface Mount
Package (Supplier)
SMT3
Power-Maximum
200mW
Rated power
200mW
Resistance-Base (R1)
10kOhm
Resistance-Emitter base (R2)
47kOhm
Vce Saturation (maximum)
300mV@250uA|5mA
Voltage-Collector-emitter breakdown (maximum)
50V

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