BAV199E6327HTSA1 Infineon Technologies RF Diode - 商品詳細情報
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Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BAV199E6327HTSA1
- Product classification
- RF Diode
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- 封装
- TO-236-3|SC-59|SOT-23-3
- 二极管种类
- Standard
- 其它名称
- BAV199E6327HTSA1DKR | BAV199INTR-NDR | BAV199E6327HTSA1CT | BAV 199 E6327 | BAV199XTINTR | BAV199INTR-ND | BAV199INCT-ND | BAV199INDKR | BAV199XTINTR-ND | BAV199E6327 | BAV199INTR | IFEINFBAV199E6327HTSA1 | BAV199E6327BTSA1 | BAV199E6327XT | SP000010326 | BAV199XTINCT | BAV199E6327HTSA1TR | BAV199XTINCT-ND | BAV199INCT-NDR | 2156-BAV199E6327HTSA1 | BAV199INDKR-ND | BAV199INCT
- Mounting Type
- Surface Mount
- Reverse recovery time
- 1.5us
- 二极管配置
- 1Series Connection
- 动作温度范围
- 150 C (Max)
- 包装（供应商）
- SOT-23-3
- 电压 - 正向 (Vf) 最大值
- 1.25V@150mA
- 电压 - 直流反向 Vr 最大值
- 80V
- 电流 - 应用 Vr 时的反向泄漏
- 5nA@75V
- 电流 - 每个二极管的平均整流 Io
- 200mA(DC)
- 速度
- Small Signal =< 200mA(Io)|Any Speed
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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