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FF11MR12W1M1B11BOMA1  Infineon Technologies  MOSFET  -  商品詳細情報

FF11MR12W1M1B11BOMA1

Infineon Technologies

MOSFET

Added to bookmarks.

FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
Product Overview

Trans MOSFET N-CH SiC 1.2KV 100A 18-Pin EASY1B-2 Tray

Lifecycle Status : Obsolete
ECCN EAR99

HTSN 8541290095

Product Overview

Trans MOSFET N-CH SiC 1.2KV 100A 18-Pin EASY1B-2 Tray

Lifecycle Status : Obsolete
ECCN EAR99

HTSN 8541290095

Product Information

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Specifications

Manufacturer name
Infineon Technologies
Product name
FF11MR12W1M1B11BOMA1
Product classification
MOSFET
Lifecycle Status
Obsolete
RoHS
RoHS
Series name
CoolSiC(TM)
Field-effect transistor type
2N-Channel(Dual)
Package
Module
Drain to Source voltage
11200V
Continuous drain current
100A
Mounting Type
Chassis Mount
Other names
2156-FF11MR12W1M1B11BOMA1 | INFINFFF11MR12W1M1B11BOMA1 | FF11MR12W1M1_B11 | SP001602204
Current - Drain (Id) (25°C)
100A
FET Feature
Silicon Carbide(SiC)
Gate Charge - (when applying Vgs)
250nC@15V
Input Capacitance - (Ciss when Vds is applied)
7950pF@800V
On Resistance - (Rds when Id,Vgs is applied)
45mOhm@25A|15V(Typ)
On Voltage - (Vgs when Id is applied)
5.55V@40mA
Operating temperature
-40 to 150C
Package (Supplier)
Module
Manufacturer Packaging
Tray
Manufacturer packaging quantity
24

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