PHKD6N02LT,518 Nexperia MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PHKD6N02LT,518
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- TrenchMOS(TM)
- Field-effect transistor type
- 2N-Channel(Dual)
- Package
- 8-SOIC(0.154inch|3.9mm)
- Drain to Source voltage
- 20V
- Continuous drain current
- 10.9A
- Drain to Source on-state resistance
- 20mOhm
- Mounting Type
- Surface Mount
- Current - Drain (Id) (25°C)
- 10.9A
- FET Feature
- Logic Level Gate
- Gate Charge - (when applying Vgs)
- 15.3nC@5V
- Input Capacitance - (Ciss when Vds is applied)
- 950pF@10V
- On Resistance - (Rds when Id,Vgs is applied)
- 20mOhm@3A|5V
- On Voltage - (Vgs when Id is applied)
- 1.5V@250uA
- Operating temperature
- -55 to 150C
- Package (Supplier)
- 8-SO
- Power-Maximum
- 4.17W
- Type
- Power MOSFET
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