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BAS4006WH6327XTSA1  Infineon Technologies  Schottky Barrier Diode  -  商品詳細情報

BAS4006WH6327XTSA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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BAS4006WH6327XTSA1

BAS4006WH6327XTSA1

Infineon Technologies

Schottky Barrier Diode

Infineon Technologies

Schottky Barrier Diode

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Produktübersicht

Diode Array 1 Pair Common Anode 40 V 120mA (DC) Surface Mount SC-70, SOT-323

Lifecycle Status : Active
ECCN EAR99

HTSN 8541100070

Produktübersicht

Diode Array 1 Pair Common Anode 40 V 120mA (DC) Surface Mount SC-70, SOT-323

Lifecycle Status : Active
ECCN EAR99

HTSN 8541100070

Product Information

Related Videos
Datenblatt
Design/Simulation Data
Other Documents
Data Sheet
Datasheet
Environmental and Reliability Data
Constitution Materials List MCDS_2013-08-29_13-08-28_MA000845632_PG-SOT323-3-1.pdf

Specifications

Herstellername
Infineon Technologies
Produktname
BAS4006WH6327XTSA1
Produkt Klassifikation
Schottky Barrier Diode
Lifecycle Status
Active
RoHS
RoHS
Average rectified current
0.12A
Package
SC-70|SOT-323
Other names
BAS 40-06W H6327 | BAS 40-06W H6327-ND | BAS4006WH6327XTSA1TR-ND | 448-BAS4006WH6327XTSA1DKR | BAS4006WH6327XTSA1TR | 448-BAS4006WH6327XTSA1CT | 2156-BAS4006WH6327XTSA1 | SP000749764 | 448-BAS4006WH6327XTSA1TR | IFEINFBAS4006WH6327XTSA1
Current - Average Rectified Io per Diode
120mA(DC)
Current - Reverse Leakage with Vr Applied
1uA@30V
Diode Configuration
1Pair Common Anode
Diode type
Schottky
Mounting Type
Surface Mount
Operating temperature range
150 C (Max)
Package (Supplier)
PG-SOT323-3
Reverse recovery time
100ps
Spannung – DC Reverse Vr Max
40V
Spannung – Vorwärts (Vf) Max
1V@40mA
Speed
Small Signal =< 200mA(Io)|Any Speed
Herstellerverpackung
Tape & Reel
Hersteller Verpackungsmenge
3000

Wenn die Produktinformationen fehlerhaft sind, weisen Sie hier darauf hin.

Documents