IGO60R070D1AUMA1 Infineon Technologies MOSFET - 商品詳細情報
加工依頼
IGO60R070D1AUMA1
IGO60R070D1AUMA1
加工依頼
| Datasheet | Infineon-Datasheet-IGO60R070D1 |
| Datasheet | EN_Infineon Technologies_Datasheet_20201013165259649 |
| Data Sheet | |
|---|---|
| Datasheet | Infineon-Datasheet-IGO60R070D1 |
| Datasheet | EN_Infineon Technologies_Datasheet_20201013165259649 |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013175934248 |
| White Paper | EN_Infineon Technologies_White Paper_20201013185603964 |
| Catalog | Gallium Nitride CoolGaN™ e-mode HEMTs |
| Other File | Gallium Nitride - CoolGaN™ - a new era in power electronics with Gallium Nitride - ETG Journal |
| Catalog(English) | Gallium Nitride CoolGaN™ e-mode HEMTs |
规格
- 制造商名称
- Infineon Technologies
- 制品名
- IGO60R070D1AUMA1
- 制品分类
- MOSFET
- 生命周期状态
- 停产品
- 系列名
- CoolGaN(TM)
- FET类型
- N-CH
- Technology System
- GaNFET(Gallium Nitride)
- 漏源电压
- 600V
- 连续漏极电流
- 31A
- Vgs(th)
- 1.6 V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss)
- 380pF
- 消耗电力
- 125W
- 动作温度范围
- -55 to 150C
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产品文档
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C1S产品编号
:C1S322000727975
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Product name : IGO60R070D1AUMA1
Manufacturers : Infineon Technologies
数量 : 0
小计 : US$0.00
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Product name : IGO60R070D1AUMA1
Manufacturers : Infineon Technologies
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