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IGO60R070D1AUMA1  Infineon Technologies  MOSFET  -  商品詳細情報

IGO60R070D1AUMA1

Infineon Technologies

MOSFET

IGO60R070D1AUMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

Added to bookmarks.

IGO60R070D1AUMA1

IGO60R070D1AUMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
生命周期状态 : 停产品
ECCN EAR99
生命周期状态 : 停产品
ECCN EAR99

产品文档

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规格

制造商名称
Infineon Technologies
制品名
IGO60R070D1AUMA1
制品分类
MOSFET
生命周期状态
停产品
系列名
CoolGaN(TM)
FET类型
N-CH
Technology System
GaNFET(Gallium Nitride)
漏源电压
600V
连续漏极电流
31A
Vgs(th)
1.6 V
Vgs (Max)
-10V
Input Capacitance (Ciss)
380pF
消耗电力
125W
动作温度范围
-55 to 150C

如果产品信息中有错误,请在此处指出。

产品文档

Expected Shipping Date : Not Available
  • C1S产品编号

    :

    C1S322000727975

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