IGT60R190D1SATMA1 Infineon Technologies MOSFET - 商品詳細情報
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IGT60R190D1SATMA1
IGT60R190D1SATMA1
Gallium nitride CoolGaN™ 600V e-mode power transistor
HTSN : 8541290095
Search Alternative Products
Gallium nitride CoolGaN™ 600V e-mode power transistor
HTSN : 8541290095
| Datasheet | Infineon-Datasheet-IGT60R190D1S |
| Datasheet | EN_Infineon Technologies_Datasheet_20201013165134594 |
| Data Sheet | |
|---|---|
| Datasheet | Infineon-Datasheet-IGT60R190D1S |
| Datasheet | EN_Infineon Technologies_Datasheet_20201013165134594 |
| Environmental and Reliability Data | |
| Constitution Materials List | MCDS_2018-07-20_15-09-03_MA001643848_PG-HSOF-8-3 |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013175831920 |
| Catalog | Gallium Nitride CoolGaN™ e-mode HEMTs |
| Other File | Gallium Nitride - CoolGaN™ - a new era in power electronics with Gallium Nitride - ETG Journal |
| White Paper | EN_Infineon Technologies_White Paper_20201013185603032 |
| Catalog | Gallium Nitride CoolGaN™ e-mode HEMTs |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IGT60R190D1SATMA1
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- Series name
- CoolGaN(TM)
- Field-effect transistor type
- N-CH
- Technology System
- GaNFET(Gallium Nitride)
- Drain to Source voltage
- 600V
- Continuous drain current
- 12.5A
- Vgs(th)
- 1.6 V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss)
- 157pF
- Power consumption
- 55.5W
- Operating temperature range
- -55 to 150C
- Other names
- IGT60R190D1SATMA1DKR | 2156-IGT60R190D1SATMA1-448 | SP001701702 | IGT60R190D1SATMA1CT | IGT60R190D1SATMA1TR
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 2000
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