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IGO60R070D1AUMA1  Infineon Technologies  MOSFET  -  商品詳細情報

IGO60R070D1AUMA1

Infineon Technologies

MOSFET

IGO60R070D1AUMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

Added to bookmarks.

IGO60R070D1AUMA1

IGO60R070D1AUMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
Lifecycle Status : Obsolete
ECCN EAR99
Lifecycle Status : Obsolete
ECCN EAR99

Product Information

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Specifications

Manufacturer name
Infineon Technologies
Product name
IGO60R070D1AUMA1
Product classification
MOSFET
Lifecycle Status
Obsolete
Series name
CoolGaN(TM)
Field-effect transistor type
N-CH
Technology System
GaNFET(Gallium Nitride)
Drain to Source voltage
600V
Continuous drain current
31A
Vgs(th)
1.6 V
Vgs (Max)
-10V
Input Capacitance (Ciss)
380pF
Power consumption
125W
Operating temperature range
-55 to 150C

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