PDTD113ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PDTD113ET,215

Nexperia

Bipolar Transistor (BJT)

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PDTD113ET,215

Nexperia

Bipolar Transistor (BJT)

Nexperia

Bipolar Transistor (BJT)

产品概要

PDTD113ET/SOT23/TO-236AB

生命周期状态 : Active

ECCN : EAR99

HTSN : 8541210080

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产品概要

PDTD113ET/SOT23/TO-236AB

生命周期状态 : Active

ECCN : EAR99

HTSN : 8541210080

产品文档

Data Sheet
Datasheet	EN_Nexperia_Datasheet_20220909105638876

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制造商名称: Nexperia

制品名: PDTD113ET,215

制品分类: Bipolar Transistor (BJT)

生命周期状态: Active

RoHS: RoHS

Transistor type: NPN-Prebias

Package: TO-236-3|SC-59|SOT-23-3

Other names: 1727-2150-2 | 568-11969-6 | 1727-2150-1 | 568-12311-2-ND | 934058975215 | 1727-2150-6 | 568-11969-6-ND | PDTD113ET,215-ND | 568-11969-1 | 5202-PDTD113ET,215TR | 568-12311-1-ND | PDTD113ET T/R-ND | 568-12311-6 | 568-12311-2 | 568-12311-1 | 2156-PDTD113ET,215 | 568-11949-2-ND | 568-12311-6-ND | 568-11969-1-ND | PDTD113ET T/R

Current-Collector (Ic) (maximum): 500mA

Current-Collector cutoff (maximum): 500nA

DC current gain (hFE) (minimum): 33@50mA,5V

Mounting Type: Surface Mount

Package (Supplier): TO-236 AB

Power-Maximum: 250mW

Resistance-Base (R1): 1kOhms

Resistance-Emitter base (R2): 1kOhms

Vce Saturation (maximum): 300mV@2.5mA,50mA

Voltage-Collector-emitter breakdown (maximum): 50V

原厂包装: Tape & Reel

制造商数量: 3000

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Reel Processing
It is a service that connects empty tape to both ends of a tape cut using a special tool, set the reel, and rewind it into the packaged form for delivery. It is made so that it can be set as is to a mounting machine. Processing is available from 100 pieces or more.
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In case the MOQ is smaller than the manufacturer's standard package quantity, it will be cut tapes even if the package is shown as "Tape & Reel".
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RoHS 2011/65/EU amended by 2015/863 Compliant

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PDTD113ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PDTD113ET,215

PDTD113ET,215

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PDTD113ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PDTD113ET,215

PDTD113ET,215

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