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CSD19532KTT  Texas Instruments  MOSFET  -  商品詳細情報

CSD19532KTT Texas Instruments

The images are for reference only. For the precise specifications, refer to the product specifications.

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CSD19532KTT

CSD19532KTT

Texas Instruments

MOSFET

Texas Instruments

MOSFET

Added to bookmarks.
ECCN EAR99

HTSN 8541290095

ECCN EAR99

HTSN 8541290095

Product Information

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Data sheet
Design/Simulation Data
Other Documents

Specifications

Manufacturer name
Texas Instruments
Product name
CSD19532KTT
Product classification
MOSFET
RoHS
Not RoHS
系列名
NexFET(TM)
FET类型
N-CH
Technology System
MOSFET(Metal Oxide)
封装
TO-263-3|D2Pak|TO-263AB
漏源电压
100V
连续漏极电流
200A
Drive Voltage (Max Rds On, Min Rds On)
6|10V
源漏开态电阻
5.6mOhm
Vgs(th)
3.2 V
Gate Charge (Qg)
57nC
Vgs (Max)
20V
Input Capacitance (Ciss)
5060pF
消耗电力
250W
动作温度范围
-55 to 175C
其它名称
-CSD19532KTT | 296-CSD19532KTTTR | 296-44970-1-ND | 296-44970-2-ND | -321-CSD19532KTTCT | CSD19532KTT-ND | 296-CSD19532KTTCT | 296-44970-6-ND | 296-CSD19532KTTDKR | 296-44970-6 | 296-44970-1 | 296-44970-2

If you find an error in the product information, please let us know here.

Expected Shipping Date : Not Available
  • C1S Part Number

    :

    C1S746205640671

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    Manufacturers : Texas Instruments

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