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BAV199E6327HTSA1  Infineon Technologies  RF Diode  -  商品詳細情報

BAV199E6327HTSA1

Infineon Technologies

RF Diode

BAV199E6327HTSA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

Added to bookmarks.

BAV199E6327HTSA1

BAV199E6327HTSA1

Infineon Technologies

RF Diode

Infineon Technologies

RF Diode

Added to bookmarks.
Product Overview

Diode Switching Si 85V 0.2A Automotive 3-Pin SOT-23 T/R

Lifecycle Status : Obsolete
ECCN EAR99

HTSN 8541100070

Product Overview

Diode Switching Si 85V 0.2A Automotive 3-Pin SOT-23 T/R

Lifecycle Status : Obsolete
ECCN EAR99

HTSN 8541100070

Product Information

Related Videos
Data sheet
Design/Simulation Data
Other Documents

Specifications

Manufacturer name
Infineon Technologies
Product name
BAV199E6327HTSA1
Product classification
RF Diode
Lifecycle Status
Obsolete
RoHS
RoHS
Package
TO-236-3|SC-59|SOT-23-3
Diode type
Standard
Other names
BAV199E6327HTSA1DKR | BAV199INTR-NDR | BAV199E6327HTSA1CT | BAV 199 E6327 | BAV199XTINTR | BAV199INTR-ND | BAV199INCT-ND | BAV199INDKR | BAV199XTINTR-ND | BAV199E6327 | BAV199INTR | IFEINFBAV199E6327HTSA1 | BAV199E6327BTSA1 | BAV199E6327XT | SP000010326 | BAV199XTINCT | BAV199E6327HTSA1TR | BAV199XTINCT-ND | BAV199INCT-NDR | 2156-BAV199E6327HTSA1 | BAV199INDKR-ND | BAV199INCT
Current - Average Rectified Io per Diode
200mA(DC)
Current - Reverse Leakage with Vr Applied
5nA@75V
Diode Configuration
1Series Connection
Mounting Type
Surface Mount
Operating temperature range
150 C (Max)
Package (Supplier)
SOT-23-3
Reverse recovery time
1.5us
Spannung – DC Reverse Vr Max
80V
Spannung – Vorwärts (Vf) Max
1.25V@150mA
Speed
Small Signal =< 200mA(Io)|Any Speed
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
3000

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