2SK4017(Q) Toshiba MOSFET - 商品詳細情報
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2SK4017(Q)
2SK4017(Q)
HTSN : 8541290095
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| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Design and Simulation Data | |
|---|---|
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Toshiba
- Product name
- 2SK4017(Q)
- Product classification
- MOSFET
- RoHS
- RoHS
- Series name
- U-MOSIII
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-251-3IPak
- Drain to Source voltage
- 60V
- Continuous drain current
- 5A
- Drive Voltage (Max Rds On, Min Rds On)
- 4|10V
- Drain to Source on-state resistance
- 100mOhm
- Vgs(th)
- 2.5 V
- Gate Charge (Qg)
- 15nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 730pF
- Power consumption
- 20W
- Operating temperature range
- 150C
- Other names
- 2SK4017
- Type
- Power MOSFET
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Documents
- Expected Shipping Date : Not Available
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C1S Part Number
:C1S751201792367
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Product name : 2SK4017(Q)
Manufacturers : Toshiba
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Product name : 2SK4017(Q)
Manufacturers : Toshiba
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