PBRP123ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PBRP123ET,215

Nexperia

Bipolar Transistor (BJT)

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PBRP123ET,215

Nexperia

Bipolar Transistor (BJT)

Nexperia

Bipolar Transistor (BJT)

ECCN : EAR99

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ECCN : EAR99

Product Information

Data sheet
3D CAD情報
- SamacSys
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PCN/PDN(EOL)

Data Sheet
Datasheet	EN_Nexperia_Datasheet_20251031095129034

Specifications

Manufacturer name: Nexperia

Product name: PBRP123ET,215

Product classification: Bipolar Transistor (BJT)

Transistor type: PNP-Prebias

Collector current: 600mA

DC electricity gain: 70@50mA@5V|180@300mA@5V|170@600mA@5V

Collector-emitter voltage: 40V

Package: TO-236-3|SC-59|SOT-23-3

Current-Collector (Ic) (maximum): 600mA

Current-Collector cutoff (maximum): 500nA

DC current gain (hFE) (minimum): 180@300mA,5V

Mounting Type: Surface Mount

Package (Supplier): TO-236 AB

Power-Maximum: 250mW

Resistance-Base (R1): 2.2kOhms

Resistance-Emitter base (R2): 2.2kOhms

Type: PNP

Vce Saturation (maximum): 750mV@6mA,600mA

Voltage-Collector-emitter breakdown (maximum): 40V

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PBRP123ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PBRP123ET,215

PBRP123ET,215

Specifications

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PBRP123ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PBRP123ET,215

PBRP123ET,215

Specifications