制造商名称

Vishay

制品名

SI4599DY-T1-GE3

制品分类

MOSFET

生命周期状态

Active

RoHS

RoHS

Series name

TrenchFET(R)

Field-effect transistor type

N and P-Channel

Package

8-SOIC(0.154inch|3.9mm)

Drain to Source voltage

40V

Continuous drain current

6.8A/5.8A

Mounting Type

Surface Mount

Other names

SI4599DY-T1-GE3CT | SI4599DY-T1-GE3DKR | SI4599DY-T1-GE3TR | SI4599DYT1GE3

Current - Drain (Id) (25°C)

6.8|5.8A

FET Feature

Logic Level Gate

Gate Charge - (when applying Vgs)

20nC@10V

Input Capacitance - (Ciss when Vds is applied)

640pF@20V

On Resistance - (Rds when Id,Vgs is applied)

35.5mOhm@5A|10V

On Voltage - (Vgs when Id is applied)

3V@250uA

Operating temperature

-55 to 150C

Package (Supplier)

8-SO

Power-Maximum

3W|3.1W

如果产品信息中有错误，请在此处指出。