IGO60R070D1AUMA1 Infineon Technologies MOSFET - 商品詳細情報
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IGO60R070D1AUMA1
IGO60R070D1AUMA1
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| Datasheet | Infineon-Datasheet-IGO60R070D1 |
| Datasheet | EN_Infineon Technologies_Datasheet_20201013165259649 |
| Data Sheet | |
|---|---|
| Datasheet | Infineon-Datasheet-IGO60R070D1 |
| Datasheet | EN_Infineon Technologies_Datasheet_20201013165259649 |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013175934248 |
| Other File | Gallium Nitride - CoolGaN™ - a new era in power electronics with Gallium Nitride - ETG Journal |
| White Paper | EN_Infineon Technologies_White Paper_20201013185603964 |
| Catalog | Gallium Nitride CoolGaN™ e-mode HEMTs |
| Catalog | Gallium Nitride CoolGaN™ e-mode HEMTs |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IGO60R070D1AUMA1
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- Series name
- CoolGaN(TM)
- Field-effect transistor type
- N-CH
- Technology System
- GaNFET(Gallium Nitride)
- Drain to Source voltage
- 600V
- Continuous drain current
- 31A
- Vgs(th)
- 1.6 V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss)
- 380pF
- Power consumption
- 125W
- Operating temperature range
- -55 to 150C
If you find an error in the product information, please let us know here.
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C1S Part Number
:C1S322000727975
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Product name : IGO60R070D1AUMA1
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