IPB110N20N3LFATMA1 Infineon Technologies MOSFET - 商品詳細情報
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IPB110N20N3LFATMA1
IPB110N20N3LFATMA1
Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
HTSN : 8541290095
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Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
HTSN : 8541290095
| Datenblatt | |
|---|---|
| Datasheet(English) | EN_Infineon Technologies_Datasheet_20230223012432632 |
| Technical Data | |
| Application Note(English) | EN_Infineon Technologies_Application Note_20201013180019761 |
Specifications
- Herstellername
- Infineon Technologies
- Produktname
- IPB110N20N3LFATMA1
- Produkt Klassifikation
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- OptiMOS(TM)-3
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Drain to Source voltage
- 200V
- Continuous drain current
- 88A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 11mOhm
- Vgs(th)
- 4.2 V
- Gate Charge (Qg)
- 76nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 650pF
- Power consumption
- 250W
- Operating temperature range
- -55 to 150C
- Other names
- SP001503864 | IPB110N20N3LFATMA1DKR | IPB110N20N3LFATMA1TR | IPB110N20N3LFATMA1CT | IPB110N20N3LFATMA1-ND | 2156-IPB110N20N3LFATMA1TR
- Herstellerverpackung
- Tape & Reel
- Hersteller Verpackungsmenge
- 1000
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