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DTA024XEBTL  Rohm  Pre-Biased Bipolar Transistor  -  商品詳細情報

DTA024XEBTL Rohm

The images are for reference only. For the precise specifications, refer to the product specifications.

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  • DTA024XEBTL

    DTA024XEBTL

    Rohm

    Pre-Biased Bipolar Transistor

    Rohm

    Pre-Biased Bipolar Transistor

    Added to bookmarks.
  • Produktübersicht

    PNP, SOT-416FL, R1not equal R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541210075

    Produktübersicht

    PNP, SOT-416FL, R1not equal R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541210075

    Product Information

    Related Videos
    Design/Simulation Data
    Other Documents
    Datenblatt
    Datasheet(English) EN_Rohm_データシート_20161101101043151
    Datasheet(English) EN_Rohm_Datasheet_20180202053934615
    Datasheet(English) EN_Rohm_Datasheet_20180216131941987
    Datasheet(English) EN_Rohm_Datasheet_20180221201605639
    Datasheet(English) EN_Rohm_Datasheet_20180228141214971
    Datasheet(English) EN_Rohm_Datasheet_20180315161821875
    Datasheet(English) EN_Rohm_Datasheet_20210617195340560
    Environmental and Reliability Data
    Other Environmental and Reliability Data(English) Moisture Sensitivity Level

    Specifications

    Herstellername
    Rohm
    Produktname
    DTA024XEBTL
    Produkt Klassifikation
    Pre-Biased Bipolar Transistor
    Lifecycle Status
    Active
    RoHS
    RoHS
    Transistor type
    PNP-Prebias+Diode
    Collector-emitter voltage
    50V
    Collector current
    100mA
    Package
    SC-89|SOT-490
    Current-Collector (Ic) (maximum)
    100mA
    Current-Collector cutoff (maximum)
    500nA
    DC current gain (hFE) (minimum)
    80@5mA,10V
    DC electricity gain
    80@5mA|10V
    Frequency-Transition
    250MHz
    Mounting Type
    Surface Mount
    Package (Supplier)
    EMT3F(SOT-416FL)
    Power-Maximum
    150mW
    Rated power
    150mW
    Resistance-Base (R1)
    22kOhm
    Resistance-Emitter base (R2)
    47kOhm
    Vce Saturation (maximum)
    150mV@500uA|5mA
    Voltage-Collector-emitter breakdown (maximum)
    50V

    Wenn die Produktinformationen fehlerhaft sind, weisen Sie hier darauf hin.

    Documents