1SS413,L3M(T Toshiba Schottky Barrier Diode - 商品詳細情報
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1SS413,L3M(T
1SS413,L3M(T
Silicon Epitaxial Schottky Barrier Type
HTSN : 8541100080
Search Alternative Products
Silicon Epitaxial Schottky Barrier Type
HTSN : 8541100080
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Toshiba_Datasheet_20250306111146409 |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Toshiba
- Product name
- 1SS413,L3M(T
- Product classification
- Schottky Barrier Diode
- Lifecycle Status
- Active
- RoHS
- RoHS
- Average rectified current
- 50mA
- Reverse voltage
- 20V
- Package
- 2-SMD/Flat-
- Other names
- 1SS413
- Electrical capacity
- 3.9pF
- Mounting Type
- Surface Mount
- Operating temperature range
- 125C
- Voltage-Forward (Vf) Standard
- 550mV
- Manufacturer packaging quantity
- 10000
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