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BAS4004E6327HTSA1  Infineon Technologies  肖特基势垒二极管  -  商品詳細情報

BAS4004E6327HTSA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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BAS4004E6327HTSA1

BAS4004E6327HTSA1

Infineon Technologies

肖特基势垒二极管

Infineon Technologies

肖特基势垒二极管

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Product Overview

Diode Array 1 Pair Series Connection 40 V 120mA (DC) Surface Mount TO-236-3, SC-59, SOT-23-3

Lifecycle Status : Active
ECCN EAR99

HTSN 8541100070

Product Overview

Diode Array 1 Pair Series Connection 40 V 120mA (DC) Surface Mount TO-236-3, SC-59, SOT-23-3

Lifecycle Status : Active
ECCN EAR99

HTSN 8541100070

Product Information

Related Videos
Data sheet
Design/Simulation Data
Other Documents
Data Sheet
Datasheet

Specifications

Manufacturer name
Infineon Technologies
Product name
BAS4004E6327HTSA1
Product classification
肖特基势垒二极管
Lifecycle Status
Active
RoHS
RoHS
Average rectified current
0.12A
Reverse voltage
40 V
Package
TO-236-3|SC-59|SOT-23-3
Other names
BAS4004E6327HTSA1DKR | BAS4004XTINTR | BAS4004 | BAS4004E6327 | 2156-BAS4004E6327HTSA1 | BAS4004E6327HTSA1TR | BAS4004INTR | BAS4004INTR-NDR | BAS4004XTINCT-ND | BAS4004INDKR | IFEINFBAS4004E6327HTSA1 | SP000010241 | BAS4004INTR-ND | BAS4004XTINTR-ND | BAS4004INCT | BAS4004E6327BTSA1 | BAS4004INCT-ND | BAS4004XTINCT | BAS4004INDKR-ND | BAS4004E6327HTSA1CT | BAS4004INCT-NDR | BAS 40-04 E6327 | BAS4004E6327XT
Current - Average Rectified Io per Diode
120mA(DC)
Current - Reverse Leakage with Vr Applied
1uA@30V
Diode Configuration
1Series Connection
Diode type
Schottky
Mounting Type
Surface Mount
Operating temperature range
150 C (Max)
Package (Supplier)
SOT-23-3
Reverse recovery time
100ps
Spannung – DC Reverse Vr Max
40V
Spannung – Vorwärts (Vf) Max
1V@40mA
Speed
Small Signal =< 200mA(Io)|Any Speed
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
24000

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