BAS4005WH6327XTSA1 Infineon Technologies Schottky Barrier Diode - 商品詳細情報
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规格
- 制造商名称
- Infineon Technologies
- 制品名
- BAS4005WH6327XTSA1
- 生命周期状态
- Active
- RoHS
- RoHS
- Average rectified current
- 0.12A
- Package
- SC-70|SOT-323
- Other names
- BAS 40-05W H6327 | 448-BAS4005WH6327XTSA1TR | 2156-BAS4005WH6327XTSA1 | BAS4005WH6327XTSA1TR | 448-BAS4005WH6327XTSA1CT | INFINFBAS4005WH6327XTSA1 | 448-BAS4005WH6327XTSA1DKR | SP000749762 | BAS 40-05W H6327-ND | BAS4005WH6327XTSA1TR-ND
- Current - Average Rectified Io per Diode
- 120mA(DC)
- Current - Reverse Leakage with Vr Applied
- 1uA@30V
- Diode Configuration
- 1Pair Common Cathode
- Diode type
- Schottky
- Mounting Type
- Surface Mount
- Operating temperature range
- 150 C (Max)
- Package (Supplier)
- PG-SOT323-3
- Reverse recovery time
- 100ps
- Spannung – DC Reverse Vr Max
- 40V
- Spannung – Vorwärts (Vf) Max
- 1V@40mA
- Speed
- Small Signal =< 200mA(Io)|Any Speed
- 原厂包装
- Tape & Reel
- 制造商数量
- 3000
如果产品信息中有错误，请在此处指出。
