DTA043EEBTL Rohm Pre-Biased Bipolar Transistor - 商品詳細情報
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DTA043EEBTL
DTA043EEBTL
Trans Digital BJT PNP 50V 100mA 3-Pin EMTF T/R
HTSN : 8541210080
Search Alternative Products
Trans Digital BJT PNP 50V 100mA 3-Pin EMTF T/R
HTSN : 8541210080
| 规格书(English) | EN_Rohm_データシート_20161101101043373 |
| 规格书 | EN_Rohm_Datasheet_20210617195228782 |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| 数据表 | |
|---|---|
| 规格书(English) | EN_Rohm_データシート_20161101101043373 |
| 规格书 | EN_Rohm_Datasheet_20210617195228782 |
| 环境和可靠性数据 | |
| Other Environmental and Reliability Data | Moisture Sensitivity Level |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Rohm
- Product name
- DTA043EEBTL
- Product classification
- Pre-Biased Bipolar Transistor
- Lifecycle Status
- 量产中
- RoHS
- 符合RoHS标准
- 晶体管类型
- PNP-Prebias
- 收集器发射器电压
- 50V
- 收集器电流
- 100mA
- R1/R2
- 1
- 封装
- SC-89|SOT-490
- 其它名称
- DTA043EEBTLCT | DTA043EEBTLTR | DTA043EEBTLDKR
- Mounting Type
- Surface Mount
- Vce 饱和度(最大值)
- 150mV@500uA|5mA
- 包装(供应商)
- EMT3F(SOT-416FL)
- 最大功率
- 150mW
- 电压-集电极-发射极击穿(最大值)
- 50V
- 电阻发射器基极 (R2)
- 4.7kOhm
- 直流电流増宽度率
- 20@5mA|10V
- 直流电流增益 (hFE)(最小值)
- 20@5mA,10V
- 阻力基础 (R1)
- 4.7kOhm
- 集流器 (Ic)(最大值)
- 100mA
- 频率转换
- 250MHz
- 额定电力
- 150mW
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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