IGLD60R190D1AUMA1 Infineon Technologies MOSFET - 商品詳細情報
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IGLD60R190D1AUMA1
IGLD60R190D1AUMA1
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| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Design and Simulation Data | |
|---|---|
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IGLD60R190D1AUMA1
- Product classification
- MOSFET
- RoHS
- RoHS
- Series name
- CoolGaN(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Drain to Source voltage
- 600V
- Continuous drain current
- 10A
- Vgs(th)
- 1.6 V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss)
- 157pF
- Power consumption
- 62.5W
- Operating temperature range
- -55 to 150C
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Documents
Expected Shipping Date : Jan-13-26
-
C1S Part Number
:C1S322002305102
Ship-from
:JP
Stock : 1,306
- In Stock (EU)
- MFR Original
- MOQ/SPQ : 10/1
- Minimum: 10 Multiples: 1
| Quantity | Pricing(USD) |
|---|---|
| 10+ | US$11.7 |
| 50+ | US$11.2 |
| 100+ | US$8.55 |
| 250+ | US$8.33 |
Click here for reel processing requests and inquiries
- Price
- US$11.7
- Merchandise total
- US$117.00
- Processing costs, etc.
- US$0
- Total(USD)
- US$117.00
-
Product name : IGLD60R190D1AUMA1
Manufacturers : Infineon Technologies
Quantity : 10
Subtotal : US$117.00
-
There are 0 part(s)
Total : US$
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Product name : IGLD60R190D1AUMA1
Manufacturers : Infineon Technologies
Quantity : 10
-
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