IRF530NSTRLPBF Infineon Technologies MOSFET - 商品詳細情報
加工依頼
IRF530NSTRLPBF
IRF530NSTRLPBF
Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) D2PAK T/R
HTSN : 8541290095
加工依頼
Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) D2PAK T/R
HTSN : 8541290095
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223013856124 |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013180124353 |
规格
- 制造商名称
- Infineon Technologies
- 制品名
- IRF530NSTRLPBF
- 制品分类
- MOSFET
- 生命周期状态
- Active
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-263-3|D2Pak|TO-263AB
- Drain to Source voltage
- 100V
- Continuous drain current
- 17A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 90mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 37nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 920pF
- Power consumption
- 3.8|70W
- Operating temperature range
- -55 to 175C
- Other names
- IRF530NSTRLPBFDKR | IRF530NSTRLPBFCT | IRF530NSTRLPBFTR | IRF530NSTRLPBF-ND | SP001563332
- Type
- Power MOSFET
- 原厂包装
- Tape & Reel
- 制造商数量
- 800
如果产品信息中有错误,请在此处指出。

