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IRF530NSTRLPBF  Infineon Technologies  MOSFET  -  商品詳細情報

IRF530NSTRLPBF

Infineon Technologies

MOSFET

IRF530NSTRLPBF Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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IRF530NSTRLPBF

IRF530NSTRLPBF

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
产品概要

Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) D2PAK T/R

生命周期状态 : Active
ECCN EAR99

HTSN 8541290095

产品概要

Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) D2PAK T/R

生命周期状态 : Active
ECCN EAR99

HTSN 8541290095

产品文档

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数据表
设计、模拟用数据

规格

制造商名称
Infineon Technologies
制品名
IRF530NSTRLPBF
制品分类
MOSFET
生命周期状态
Active
RoHS
RoHS
Series name
HEXFET(R)
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Package
TO-263-3|D2Pak|TO-263AB
Drain to Source voltage
100V
Continuous drain current
17A
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source on-state resistance
90mOhm
Vgs(th)
4 V
Gate Charge (Qg)
37nC
Vgs (Max)
20V
Input Capacitance (Ciss)
920pF
Power consumption
3.8|70W
Operating temperature range
-55 to 175C
Other names
IRF530NSTRLPBFDKR | IRF530NSTRLPBFCT | IRF530NSTRLPBFTR | IRF530NSTRLPBF-ND | SP001563332
Type
Power MOSFET
原厂包装
Tape & Reel
制造商数量
800

如果产品信息中有错误,请在此处指出。

产品文档