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    High-speed switching contributes to the downsizing of LCD parts.
    Higher breakdown voltage than Si devices, yet lower switching and conduction loss

  • Schottky diodes

    Uses a more robust and reliable MPS design than Si devices.
    In combination with the Wolfspeed MOSFET, offering a higher level of efficiency.

  • Power modules

    Standard power modules improve performance with the latest SiC chipsets, minimizing package parasitics.

  • Gate driver board

    You can begin evaluating high-efficiency devices with a gate driver board equipped with a SiC chipset.

Special and New Product Information

WolfPACK SiC Power Modules

They are 1200V SiC power MOSFET modules. It is an easy-to-use package due to the adoption of industry standard packages and pin compatibility.
-Half-bridge and six-pack configurations
-Available in high temperature (150℃)
-1200V withstand voltage

C3D SiC Schottky Diode

The Z-Rec series of Junction Barrier Schottky (JBS) diodes take advantage of silicon carbide on silicon to reduce diode switching loss.

XM3 Power Module

Power modules are ideal for demanding applications such as EV chargers, UPS
- Operates at high temperatures (175°C)
- Low inductance design (6.7 nH)
- 3rd generation SiC MOSFET with reduced switching loss

3rd Generation 650V SiC MOSFET

The 3rd generation 650V SiC MOSFET family is ideal for use in high power applications. It has the following advantages compared to current products;
-Reduced on-resistance by 30%
-Increased current rating by 20%

2nd Generation 1700V SiC MOSFET

1700V SiC MOSFET family is ideal for use in high power applications. It has the following advantages compared to current products;
-Reduced on-resistance by 30%
-Optimal for high pressure resistant application

6th Generation 650 SiC Schottky Diode

New 6th generation shottky diode family offers best-in-class forward voltage drop (VF = 1.27v). In addition, it inherits the MPS structure adopted from the 3rd generation, has a high surge current withstand and long-term reliability.


Introducing the Wolfspeed WolfPACK

The Power of SiC

Wolfspeed's New 650V Silicon Carbide MOSFETs

High Temperature, Wide Bandgap Underhood Inverter

SiC Converters in the Lab

Using SiC Devices to Improve an LED Driver

Charge Electric Vehicles Faster with Wolfspeed Silicon Carbide

Wolfspeed Silicon Carbide and Automated Production Lines

If Every Data Center on Earth Used Wolfspeed Silicon Carbide

See All


About Wolfspeed

We’re leading the transformation from silicon to silicon carbide and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications.