IPB200N25N3GATMA1 Infineon Technologies MOSFET - 商品詳細情報
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IPB200N25N3GATMA1
IPB200N25N3GATMA1
Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263
HTSN : 8541290095
Search Alternative Products
Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) TO-263
HTSN : 8541290095
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223011836807 |
| Environmental and Reliability Data | |
| Constitution Materials List | MCDS_2013-08-29_07-45-28_MA000812202_PG-TO263-3-2.pdf |
| Package Information | |
| Package Dimensions(English) | PG-TO263-3-2 | IPB200N25N3GATMA1 |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013175951525 |
| Selection/Solution Guide | EN_Infineon Technologies_Selection/Solution Guide_20201013184942582 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IPB200N25N3GATMA1
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Package
- TO-263
- Drain to Source voltage
- 250V
- Continuous drain current
- 64A
- Drain to Source on-state resistance
- 20mOhm
- Other names
- IPB200N25N3GATMA1TR | IPB200N25N3 G | IPB200N25N3 GDKR-ND | IPB200N25N3 GDKR | IPB200N25N3 GTR-ND | SP000677896 | IPB200N25N3 GCT-ND | IPB200N25N3G | IPB200N25N3 GCT | IPB200N25N3GATMA1CT | IPB200N25N3 G-ND | IPB200N25N3GATMA1DKR | IPB200N25N3 GTR
- Type
- Power MOSFET
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 1000
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