BAV199E6327HTSA1 Infineon Technologies RF Diode - 商品詳細情報
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BAV199E6327HTSA1
BAV199E6327HTSA1
Diode Switching Si 85V 0.2A Automotive 3-Pin SOT-23 T/R
HTSN : 8541100070
Search Alternative Products
Diode Switching Si 85V 0.2A Automotive 3-Pin SOT-23 T/R
HTSN : 8541100070
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223011857444 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BAV199E6327HTSA1
- Product classification
- RF Diode
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Package
- TO-236-3|SC-59|SOT-23-3
- Diode type
- Standard
- Other names
- BAV199E6327HTSA1DKR | BAV199INTR-NDR | BAV199E6327HTSA1CT | BAV 199 E6327 | BAV199XTINTR | BAV199INTR-ND | BAV199INCT-ND | BAV199INDKR | BAV199XTINTR-ND | BAV199E6327 | BAV199INTR | IFEINFBAV199E6327HTSA1 | BAV199E6327BTSA1 | BAV199E6327XT | SP000010326 | BAV199XTINCT | BAV199E6327HTSA1TR | BAV199XTINCT-ND | BAV199INCT-NDR | 2156-BAV199E6327HTSA1 | BAV199INDKR-ND | BAV199INCT
- Current - Average Rectified Io per Diode
- 200mA(DC)
- Current - Reverse Leakage with Vr Applied
- 5nA@75V
- Diode Configuration
- 1Series Connection
- Mounting Type
- Surface Mount
- Operating temperature range
- 150 C (Max)
- Package (Supplier)
- SOT-23-3
- Reverse recovery time
- 1.5us
- Spannung – DC Reverse Vr Max
- 80V
- Spannung – Vorwärts (Vf) Max
- 1.25V@150mA
- Speed
- Small Signal =< 200mA(Io)|Any Speed
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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