CSD19532KTT MOSFET

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Product Information	ECCN	Series name	Field-effect transistor type	Technology System	Package	Drain to Source voltage	Continuous drain current	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source on-state resistance	Vgs(th)	Gate Charge (Qg)	Vgs (Max)	Input Capacitance (Ciss)	Power consumption	Operating temperature range
CSD19532KTT Texas Instruments MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.	ECCN：EAR99	NexFET(TM)	N-CH	MOSFET(Metal Oxide)	TO-263-3\|D2Pak\|TO-263AB	100V	200A	6\|10V	5.6mOhm	3.2 V	57nC	20V	5060pF	250W	-55 to 175C	N	-CSD19532KTT \| 296-CSD19532KTTTR \| 296-44970-1-ND \| 296-44970-2-ND \| -321-CSD19532KTTCT \| CSD19532KTT-ND \| 296-CSD19532KTTCT \| 296-44970-6-ND \| 296-CSD19532KTTDKR \| 296-44970-6 \| 296-44970-1 \| 296-44970-2
CSD19532KTTT Texas Instruments MOSFET NCHANNEL100V200ATA250WTCSURFACEMOUNTTO263DDPAK3 Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.	ECCN：EAR99	NexFET(TM)	N-CH	MOSFET(Metal Oxide)	TO-263-3\|D2Pak\|TO-263AB	100V	200A	6\|10V	5.6mOhm	3.2 V	57nC	20V	5060pF	250W	-55 to 175C	N	2156-CSD19532KTTT \| 296-43211-6 \| TEXTISCSD19532KTTT \| 296-43211-1 \| 296-43211-2
CSD19532KTT Texas Instruments MOSFET TRANSMOSFETNCHSI100V200A4PIN3TABTO263TR Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.	ECCN：EAR99	NexFET(TM)	N-CH	MOSFET(Metal Oxide)	TO-263-3\|D2Pak\|TO-263AB	100V	200A	6\|10V	5.6mOhm	3.2 V	57nC	20V	5060pF	250W	-55 to 175C	N	-CSD19532KTT \| 296-CSD19532KTTTR \| 296-44970-1-ND \| 296-44970-2-ND \| -321-CSD19532KTTCT \| CSD19532KTT-ND \| 296-CSD19532KTTCT \| 296-44970-6-ND \| 296-CSD19532KTTDKR \| 296-44970-6 \| 296-44970-1 \| 296-44970-2
CSD19532KTT Texas Instruments MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.	ECCN：EAR99	NexFET(TM)	N-CH	MOSFET(Metal Oxide)	TO-263-3\|D2Pak\|TO-263AB	100V	200A	6\|10V	5.6mOhm	3.2 V	57nC	20V	5060pF	250W	-55 to 175C	N	-CSD19532KTT \| 296-CSD19532KTTTR \| 296-44970-1-ND \| 296-44970-2-ND \| -321-CSD19532KTTCT \| CSD19532KTT-ND \| 296-CSD19532KTTCT \| 296-44970-6-ND \| 296-CSD19532KTTDKR \| 296-44970-6 \| 296-44970-1 \| 296-44970-2
CSD19532KTTT Texas Instruments MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.	ECCN：EAR99	NexFET(TM)	N-CH	MOSFET(Metal Oxide)	TO-263-3\|D2Pak\|TO-263AB	100V	200A	6\|10V	5.6mOhm	3.2 V	57nC	20V	5060pF	250W	-55 to 175C	N	2156-CSD19532KTTT \| 296-43211-6 \| TEXTISCSD19532KTTT \| 296-43211-1 \| 296-43211-2
CSD19532KTT Texas Instruments MOSFET Added to BOM. Add to BOM Existing BOM New BOM Added to bookmarks.	ECCN：EAR99	NexFET(TM)	N-CH	MOSFET(Metal Oxide)	TO-263-3\|D2Pak\|TO-263AB	100V	200A	6\|10V	5.6mOhm	3.2 V	57nC	20V	5060pF	250W	-55 to 175C	N	-CSD19532KTT \| 296-CSD19532KTTTR \| 296-44970-1-ND \| 296-44970-2-ND \| -321-CSD19532KTTCT \| CSD19532KTT-ND \| 296-CSD19532KTTCT \| 296-44970-6-ND \| 296-CSD19532KTTDKR \| 296-44970-6 \| 296-44970-1 \| 296-44970-2

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SUN	MON	TUE	WED	THU	FRI	SAT
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"MOSFET"Search results

Manufacturer

Series name

Field-effect transistor type

Technology System

Package

Drain to Source voltage

Continuous drain current

Drive Voltage (Max Rds On, Min Rds On)

Drain to Source on-state resistance

Vgs(th)

Gate Charge (Qg)

Vgs (Max)

Input Capacitance (Ciss)

Power consumption

Operating temperature range