FF11MR12W1M1B11BOMA1 Infineon Technologies MOSFET - 商品詳細情報
Search Alternative Products
FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1
Trans MOSFET N-CH SiC 1.2KV 100A 18-Pin EASY1B-2 Tray
HTSN : 8541290095
Search Alternative Products
Trans MOSFET N-CH SiC 1.2KV 100A 18-Pin EASY1B-2 Tray
HTSN : 8541290095
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223012432540 |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013180158031 |
| Other File | Article Bodos Power - Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- FF11MR12W1M1B11BOMA1
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Series name
- CoolSiC(TM)
- Field-effect transistor type
- 2N-Channel(Dual)
- Package
- Module
- Drain to Source voltage
- 11200V
- Continuous drain current
- 100A
- Mounting Type
- Chassis Mount
- Other names
- 2156-FF11MR12W1M1B11BOMA1 | INFINFFF11MR12W1M1B11BOMA1 | FF11MR12W1M1_B11 | SP001602204
- Current - Drain (Id) (25°C)
- 100A
- FET Feature
- Silicon Carbide(SiC)
- Gate Charge - (when applying Vgs)
- 250nC@15V
- Input Capacitance - (Ciss when Vds is applied)
- 7950pF@800V
- On Resistance - (Rds when Id,Vgs is applied)
- 45mOhm@25A|15V(Typ)
- On Voltage - (Vgs when Id is applied)
- 5.55V@40mA
- Operating temperature
- -40 to 150C
- Package (Supplier)
- Module
- Manufacturer Packaging
- Tray
- Manufacturer packaging quantity
- 24
If you find an error in the product information, please let us know here.

