2SK3566(STA4,Q,M) Toshiba MOSFET - 商品詳細情報
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Specifications
- Herstellername
- Toshiba
- Produktname
- 2SK3566(STA4,Q,M)
- Produkt Klassifikation
- MOSFET
- Lifecycle Status
- NRND
- RoHS
- RoHS
- Series name
- π-MOSIV
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 900V
- Continuous drain current
- 2.5A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 6.4Ohm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 12nC
- Vgs (Max)
- 30V
- Input Capacitance (Ciss)
- 470pF
- Power consumption
- 40W
- Operating temperature range
- 150C
- Other names
- 2SK3566
- Remarks
- 世代：π-MOSIV / ゲート入力電荷量：12nC(typ.) / 入力容量：470pF(typ.)
- Product name
- 小信号MOS FET 1素子
- Type
- Power MOSFET
- Hersteller Verpackungsmenge
- 50
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